Samsung has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market. Samsung’s advanced “channel hole etching” technology showcases the company’s leadership in process capabilities. This technology creates electron pathways by stacking mold layers and maximizes fabrication productivity as it enables simultaneous drilling of the industry’s highest cell layer count.