BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices. In ferromagnetic devices, data is written or stored by aligning magnetic moments. However, generating and manipulating magnetic fields is energy-intensive, and in ferroelectric memory devices, reading data destroys the polarized state. As a result, data can be written using electric fields, which is more energy-efficient than